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tag:National Yang Ming Chiao Tung University

Chip Industry’s Technical Paper Roundup: Feb. 14
ByLinda Christensen- 14 Feb, 2023 - Comments: 0

最近添加到半导体和新技术论文or Engineering’s library: [table id=80 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us p...» read more

广告vanced Packaging for High-Bandwidth Memory: Influences of TSV size, TSV Aspect Ratio And Annealing Temperature
ByTechnical Paper Link- 13 Feb, 2023 - Comments: 0

A technical paper titled "Stress Issue of Vertical Connections in 3D Integration for High-Bandwidth Memory Applications" was published by researchers at National Yang Ming Chiao Tung University. Abstract: "The stress of TSV with different dimensions under annealing condition has been investigated. Since the application of TSV and bonding technology has demonstrated a promising approach for ...» read more

Technical Paper Roundup: Sept. 12
ByLinda Christensen- 12 Sep, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=51 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit f...» read more

Scaling Down To 2nm: Using Microwaves For Efficient & Stable Doping
ByTechnical Paper Link- 09 Sep, 2022 - Comments: 0

A new technical paper titled "Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit" was just published by researchers at National Taiwan University, Cornell University, TSMC, University of Valladolid, DSG Technologies, National Central University and National Yang Ming Chiao Tung University. A modified microwave was used...» read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML
ByTechnical Paper Link- 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF...» read more

Technical Paper Round-Up: May 24
ByLinda Christensen- 24 May, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=29 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a ...» read more

Nanosheet GeSn pTFTs: High Performance, Low Thermal Budget
ByTechnical Paper Link- 23 May, 2022 - Comments: 0

New technical paper titled "Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor" from researchers at National Yang Ming Chiao Tung University and others. Abstract "High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole ...» read more

Study Of Bondable Laser Release Material Using 355nm Energy To Facilitate RDL-First And Die-First Fan-Out Wafer-Level Packaging (FOWLP)
ByBrewer Science- 18 May, 2022 - Comments: 0

A thorough evaluation on selecting a bondable laser release material for redistribution layer (RDL)-first and die-first fan-out wafer-level packaging (FOWLP) is presented in this article. Four laser release materials were identified based on their absorption coefficient at 355 nm. In addition, all four of these materials possess thermal stability above 350 °C and pull-off adhesion on a Ti/Cu l...» read more

Technical Paper Round-up: April 26
ByLinda Christensen- 26 Apr, 2022 - Comments: 0

Find all technical papers in Semiconductor Engineering’s library. [table id=23 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a ...» read more

Artificial intelligence deep learning for 3D IC reliability prediction
ByTechnical Paper Link- 25 Apr, 2022 - Comments: 0

New research from National Yang Ming Chiao Tung University, National Center for High-Performance Computing (Taiwan), Tunghai University, MA-Tek Inc, and UCLA. Abstract "Three-dimensional integrated circuit (3D IC) technologies have been receiving much attention recently due to the near-ending of Moore’s law of minimization in 2D IC. However, the reliability of 3D IC, which is greatly infl...» read more

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