15海里,印刷64纳米球和需要以下,和EUV取代ArF多次曝光方法模式必须打印在接触过程。
的逻辑代15 nm节点和超越,印刷的音调在64纳米以下是必要的。对EUV光刻取代ArF-based多次曝光技术,应打印这些模式在一个曝光的过程。The k1 factor is roughly 0.6 for 64nm pitch at an NA of 0.25, and k1 0.52 for 56nm pitch. These k1 numbers are of the same order at which model based OPC was introduced in KrF and ArF lithography a decade or so earlier. While we have done earlier work that used model-based OPC for the 22nm node test devices using EUV,1 we used a simple threshold model without further resist model calibration. For 64 nm pitch at an NA of 0.25, the OPC becomes more important, and at 56nm pitch it becomes critical. For 15 nm node lithography, we resort to a full resist model calibration using tools that were adapted from conventional optical lithography. We use a straight shrink 22 nm test layout to assess post-OPC printability.
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