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MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors


文摘:“基于MXene-GaN-MXene多个quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced b...» read more

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